Voltage, current and frequency ranges
The figure (in log-log scale) shows the power-frequency capability of the current devices and their future trends. The power is given by V-I ratings product, that is, the product of the maximum blocking voltage and maximum turn-off current. Note that the BJT is completely removed from the figure.
Thyristors and triacs are essentially low-frequency (50/60 Hz) devices, and currently the thyristor has the highest power rating.
The future trend, as indicated by the dashed curve, also indicates that has the highest power rating
High-power thyristors are used in high-voltage dc (HVDC) systems, phase-control type static VAR compensators (SVC), and large ac motor drives.
GTOs and IGCTs have a higher frequency range (typically a few hundred hertz to one kilohertz) but their power limits are lower than that of a thyristor. Normally, with a higher power rating, the switching frequency becomes lower, and this is indicated by tapering of the areas at higher frequency.
However, an IGCT’s switching frequency is somewhat higher than that of a GTO (not shown).
IGBT intelligent power modules (IPMs) come next with higher frequency but lower power range.
The lower power end of GTO/IGCTs overlaps with IGBTs.
The discrete IGBTs have higher frequency and lower power range, as shown.
Power MOSFETs have the highest frequency and lowest power range.
Power MOSFET
|
IGBT
|
GTO
|
IGCT
| |
1. Voltage and current ratings
(selected device for comparison)
|
100 V, 20 A* (dc)
|
1.2 KV, 50 A* (dc)
|
6 KV, 6000 A* (pk)
|
4.5 KV, 4000 A* (pk)
|
2. Present power capability
|
1.2 KV, 50 A
|
3.5 KV, 1200 A or higher
|
6 KV, 6000 A
|
6.5 KV, 3000 A
|
3.Voltage blocking
|
Asymmetric
|
Asymmetric*
|
Asymmetric/symmetric
|
Asymmetric/symmetric
|
4. Gating
|
Voltage
|
Voltage
|
Current
|
Current
|
5. Junc. Temp. range
|
-55 to 175
|
-20 to 50
|
-40 to 125
|
-40 to 125
|
6. Safe operating area (ºC)
|
Square
|
Square
|
2nd breakdown
|
Square
|
7. Conduction drop (V) at rated current
|
2.24
|
2.65
|
3.5
|
2.7
|
8. Switching frequency
|
106 Hz
|
1 kHz – 20 kHz
|
400 Hz
|
1.0 kHz
|
9. Turn-off current gain
|
-
|
-
|
4 to 5
|
1
|
10. Turn-off di/dt
|
-
|
-
|
500 A/µs
|
3000 A/µs
|
11. Turn-on time
|
43 ns
|
0.9 µs
|
5 µs
|
2 µs
|
12. Turn-off time
|
52 ns
|
2.4 µs
|
20a µs
|
2.5 µs
|
13. Snubber
|
Yes or No
|
Yes or No
|
Yes (heavy)
|
Yes or No
|
14. Protection
|
Gate control
|
Gate control
|
Gate control or very fast fuse
|
Gate control or very fast fuse
|
15. Application
|
Switching power supply, Low power motor drive
|
Motor drive, UPS, induction heating, etc.
|
Motor drives, SVC, etc
|
Motor drives, HVDC, SVC etc.
|
16. Comments
|
Body diode can carry full current but sluggish
(trr = 150 ns)
Ipk = 56 A
|
Large power range, very important device currently
*Reverse blocking available
|
Dv/dt = 1000 V/µs
High uncontrollable surge current
|
Built-in diode, High uncontrollable surge current
Dv/dt = 4000 V/µs
|
*Harris IRF 140
|
*Powerex PM50RVA 120
7-pack IPM
|
*Mitsubishi
-FG6000AU-120D
|
*ABB 5SHY35L4512
|
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