Objectives
- Identify different important features and steady-state and switching characteristics of power semiconductor diodes
- Understand the importance of forward and reverse recovery times
- Know the applications of different power semiconductor diodes in Power Electronic Circuits
- Get idea on characteristics of a commercial diode
Power diodes have larger power-, voltage-, and current handling capabilities than that of ordinary signal diodes.
Power diodes have an additional lightly doped drift region (n-) which helps to increase the voltage capability of the device.
However, the frequency response or switching speed is low compared to that of signal diodes.
Applications: 1) as uncontrolled rectifiers to convert AC to fixed DC voltages and 2) as freewheeling diodes to provide a path for the current flow in inductive loads.
I-V Characteristics (at steady state) of Power Diode
Forward-biased region, where vD > 0. ID is very small if vD < VTH (threshold or cut-in or turn-on or knee voltage). ID is large if vD >VTH. The diode conducts fully and ID is limited externally.
Reverse-biased region, where vD < 0. The reverse leakage current, IR (or IS) is very small, in the range of micro- to milli-ampere due to the flow of the thermally generated carriers.
Breakdown region, where vD < -VBR (breakdown voltage). VBR is avalanche or zener voltage, where avalanche breakdown begins to occur. The reverse current increases rapidly with a small change in reverse voltage beyond VBR. If the current is limited external, the diode is not spoiled as long as the power dissipation (ID*VBR) < PD,max.
Comparisons of Power and Signal DiodesVTH
Power diodes: ~1VForward i-v Characteristics
Signal diodes: ~0.7V
Power diodes: linearRon (ohmic resistance)
Signal diodes: exponential
Power diodes: >0Ωprevious Control Characteristics Devices
Signal diodes: ~0Ω
next Switching Characteristics of Power Diodes
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